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ContactSI3443DVTRPBF
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 65mOhm @ 4.4A, 4.5V ±12V 1079pF @ 10V 15nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
- Manufacturer: Infineon Technologies
- NO: 376-SI3443DVTRPBF
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 92176
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 65mOhm @ 4.4A, 4.5V ±12V 1079pF @ 10V 15nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6 (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Supplier Device Package | Micro6™(TSOP-6) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Termination | SMD/SMT |
| Resistance | 65mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta |
| Power Dissipation | 2W |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1079pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Rise Time | 33ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 72 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | -4.4A |
| Threshold Voltage | -1.2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | -20V |
| Input Capacitance | 1.079nF |
| Drain to Source Resistance | 65mOhm |
| Rds On Max | 65 mΩ |
| Nominal Vgs | -1.2 V |
| Height | 990.6μm |
| Length | 3.0988mm |
| Width | 1.7mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
