SI2342DS-T1-GE3

Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI2342DS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 7972
  • Description: Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R (Kg)

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SPECIFICATIONS

Parameters
Max Junction Temperature (Tj) 150°C
Transistor Application SWITCHING
Turn-Off Delay Time 65 ns
Transistor Element Material SILICON
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 4V
Gate Charge (Qg) (Max) @ Vgs 15.8nC @ 4.5V
Rise Time 14ns
Fall Time (Typ) 25 ns
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 8V
Drain Current-Max (Abs) (ID) 6A
Current - Continuous Drain (Id) @ 25°C 6A Tc
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Factory Lead Time 14 Weeks
Mount Surface Mount
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
Radiation Hardening No
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
REACH SVHC No SVHC
Height 1.12mm
Mounting Type Surface Mount
Operating Temperature -55°C~150°C TJ
Technology MOSFET (Metal Oxide)
Operating Mode ENHANCEMENT MODE
JESD-609 Code e3
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Channels 1
Subcategory FET General Purpose Powers
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 1.3W
Turn On Delay Time 6 ns
Threshold Voltage 800mV
Power Dissipation-Max 2.5W Tc
Continuous Drain Current (ID) 6A

MOSFET 8V Vds 5V Vgs SOT-23

In Stock

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