SI2333DDS-T1-GE3

MOSFET (Metal Oxide) P-Channel Digi-Reel® 28m Ω @ 5A, 4.5V ±8V 1275pF @ 6V 35nC @ 8V 12V TO-236-3, SC-59, SOT-23-3


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI2333DDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 9104
  • Description: MOSFET (Metal Oxide) P-Channel Digi-Reel® 28m Ω @ 5A, 4.5V ±8V 1275pF @ 6V 35nC @ 8V 12V TO-236-3, SC-59, SOT-23-3 (Kg)

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SPECIFICATIONS

Parameters
Rds On (Max) @ Id, Vgs 28m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1275pF @ 6V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 8V
Rise Time 24ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -5A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage -12V
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.2W Ta 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Turn On Delay Time 26 ns
FET Type P-Channel
Transistor Application SWITCHING

SI2333DDS-T1-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1275pF @ 6V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5A.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-12V, and this device has a drain-to-source breakdown voltage of -12V voltage.In this device, the drain current is 6A, which is the maximum continuous current the device can conduct.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.A turn-on delay time of 26 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -1V.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).

SI2333DDS-T1-GE3 Features


a continuous drain current (ID) of -5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 45 ns
a threshold voltage of -1V
a 12V drain to source voltage (Vdss)

SI2333DDS-T1-GE3 Applications


There are a lot of Vishay Siliconix SI2333DDS-T1-GE3 applications of single MOSFETs transistors.

  • Server power supplies
  • DC/DC converters
  • General Purpose Interfacing Switch
  • LCD/LED/ PDP TV Lighting
  • AC-DC Power Supply
  • Synchronous Rectification
  • Motor control
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Solar Inverter
  • LCD/LED TV

In Stock

Please send RFQ , we will respond immediately.