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ContactSI1051X-T1-E3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 122mOhm @ 1.2A, 4.5V ±5V 560pF @ 4V 9.45nC @ 5V 8V SOT-563, SOT-666
- Manufacturer: Vishay Siliconix
- NO: 880-SI1051X-T1-E3
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 15490
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 122mOhm @ 1.2A, 4.5V ±5V 560pF @ 4V 9.45nC @ 5V 8V SOT-563, SOT-666 (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Supplier Device Package | SC-89-6 |
| Weight | 32.006612mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 236mW Ta |
| Element Configuration | Single |
| Turn On Delay Time | 7.2 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs | 9.45nC @ 5V |
| Rise Time | 36ns |
| Drain to Source Voltage (Vdss) | 8V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±5V |
| Fall Time (Typ) | 36 ns |
| Turn-Off Delay Time | 52 ns |
| Continuous Drain Current (ID) | 1.2A |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 560pF |
| Drain to Source Resistance | 198mOhm |
| Rds On Max | 122 mΩ |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.2mm |
| RoHS Status | ROHS3 Compliant |
