SI1012CR-T1-GE3

VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI1012CR-T1-GE3
  • Package: SC-75, SOT-416
  • Datasheet: pdf
  • Stock: 4155
  • Description: VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount(Kg)

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SPECIFICATIONS

Parameters
Power Dissipation 240mW
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 396m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 8V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 800μm
Length 1.68mm
Width 860μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 396mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 240mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE

In Stock

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