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ContactSCTWA50N120
SiCFET (Silicon Carbide) N-Channel 69m Ω @ 40A, 20V +25V, -10V 1900pF @ 400V 122nC @ 20V 1200V TO-247-3
- Manufacturer: STMicroelectronics
- NO: 761-SCTWA50N120
- Package: TO-247-3
- Datasheet:
- Stock: 12071
- Description: SiCFET (Silicon Carbide) N-Channel 69m Ω @ 40A, 20V +25V, -10V 1900pF @ 400V 122nC @ 20V 1200V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~200°C TJ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | SiCFET (Silicon Carbide) |
| Base Part Number | SCTWA |
| Power Dissipation-Max | 318W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 69m Ω @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 65A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| RoHS Status | ROHS3 Compliant |
