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ContactSCT3080ALGC11
MOSFET (Metal Oxide) N-Channel Tube 104m Ω @ 10A, 18V +22V, -4V 571pF @ 500V 48nC @ 18V 650V TO-247-3
- Manufacturer: ROHM Semiconductor
- NO: 687-SCT3080ALGC11
- Package: TO-247-3
- Datasheet:
- Stock: 1774
- Description: MOSFET (Metal Oxide) N-Channel Tube 104m Ω @ 10A, 18V +22V, -4V 571pF @ 500V 48nC @ 18V 650V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 21 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON CARBIDE |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 134W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 104m Ω @ 10A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 571pF @ 500V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 18V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain-source On Resistance-Max | 0.104Ohm |
| Pulsed Drain Current-Max (IDM) | 75A |
| DS Breakdown Voltage-Min | 650V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
