SCT3040KLGC11

SiCFET (Silicon Carbide) N-Channel Tube 52m Ω @ 20A, 18V +22V, -4V 1337pF @ 800V 107nC @ 18V 1200V TO-247-3


  • Manufacturer: ROHM Semiconductor
  • NO: 687-SCT3040KLGC11
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 5938
  • Description: SiCFET (Silicon Carbide) N-Channel Tube 52m Ω @ 20A, 18V +22V, -4V 1337pF @ 800V 107nC @ 18V 1200V TO-247-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 21 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 262W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 20A, 18V
Vgs(th) (Max) @ Id 5.6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1337pF @ 800V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 18V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Continuous Drain Current (ID) 55A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 137A
DS Breakdown Voltage-Min 1200V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.