SCT3022ALGC11

SiCFET (Silicon Carbide) N-Channel Tube 28.6m Ω @ 36A, 18V +22V, -4V 2208pF @ 500V 133nC @ 18V TO-247-3


  • Manufacturer: ROHM Semiconductor
  • NO: 687-SCT3022ALGC11
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 16
  • Description: SiCFET (Silicon Carbide) N-Channel Tube 28.6m Ω @ 36A, 18V +22V, -4V 2208pF @ 500V 133nC @ 18V TO-247-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 21 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 175°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 339W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 339W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28.6m Ω @ 36A, 18V
Vgs(th) (Max) @ Id 5.6V @ 18.2mA
Input Capacitance (Ciss) (Max) @ Vds 2208pF @ 500V
Current - Continuous Drain (Id) @ 25°C 93A Tc
Gate Charge (Qg) (Max) @ Vgs 133nC @ 18V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 93A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 22V
Drain-source On Resistance-Max 0.0286Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 232A
Max Junction Temperature (Tj) 175°C
Height 25.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.