RUM003N02T2L

MOSFET N-CH 20V 300MA VMT3


  • Manufacturer: ROHM Semiconductor
  • NO: 687-RUM003N02T2L
  • Package: SOT-723
  • Datasheet: pdf
  • Stock: 2321
  • Description: MOSFET N-CH 20V 300MA VMT3(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 300mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 300mA
Threshold Voltage 300mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.