RT1A050ZPTR

MOSFET P-CH 12V 5A TSST8


  • Manufacturer: ROHM Semiconductor
  • NO: 687-RT1A050ZPTR
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 7805
  • Description: MOSFET P-CH 12V 5A TSST8(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 96MOhm
Terminal Finish TIN COPPER
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 6V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Rise Time 95ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 220 ns
Turn-Off Delay Time 410 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 20A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.