RSS060P05FRATB

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 36m Ω @ 6A, 10V ±20V 2700pF @ 10V 32.2nC @ 5V 45V 8-SOIC (0.154, 3.90mm Width)


  • Manufacturer: ROHM Semiconductor
  • NO: 687-RSS060P05FRATB
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 8509
  • Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 36m Ω @ 6A, 10V ±20V 2700pF @ 10V 32.2nC @ 5V 45V 8-SOIC (0.154, 3.90mm Width) (Kg)

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SPECIFICATIONS

Parameters
Threshold Voltage -2.5V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.053Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 45V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C
Packaging Cut Tape (CT)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 32.2nC @ 5V
Drain to Source Voltage (Vdss) 45V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) -6A

In Stock

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