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MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 6.7m Ω @ 15A, 4.5V ±8V 4800pF @ 10V 60nC @ 4.5V 20V 8-PowerVDFN
- Manufacturer: ROHM Semiconductor
- NO: 687-RQ3C150BCTB
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 2549
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 6.7m Ω @ 15A, 4.5V ±8V 4800pF @ 10V 60nC @ 4.5V 20V 8-PowerVDFN (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 20W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.7m Ω @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Drain Current-Max (Abs) (ID) | 15A |
| Drain-source On Resistance-Max | 0.0085Ohm |
| Pulsed Drain Current-Max (IDM) | 60A |
| DS Breakdown Voltage-Min | 20V |
| Avalanche Energy Rating (Eas) | 33 mJ |
| RoHS Status | ROHS3 Compliant |
