RJU003N03T106

MOSFET N-CH 30V 300MA SOT-323


  • Manufacturer: ROHM Semiconductor
  • NO: 687-RJU003N03T106
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 6925
  • Description: MOSFET N-CH 30V 300MA SOT-323(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 1.1Ohm
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 200mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 24pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 300mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.5 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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