RJK2555DPA-WS#J0

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 104m Ω @ 8.5A, 10V ±30V 2400pF @ 25V 39nC @ 10V 250V 8-PowerWDFN


  • Manufacturer: Renesas Electronics America
  • NO: 668-RJK2555DPA-WS#J0
  • Package: 8-PowerWDFN
  • Datasheet: pdf
  • Stock: 9410
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 104m Ω @ 8.5A, 10V ±30V 2400pF @ 25V 39nC @ 10V 250V 8-PowerWDFN (Kg)

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  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 104m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Ta
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

In Stock

Please send RFQ , we will respond immediately.