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MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 5.6m Ω @ 80A, 10V ±20V 2410pF @ 20V 31.1nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: ROHM Semiconductor
- NO: 687-RJ1G08CGNTLL
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 64
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 5.6m Ω @ 80A, 10V ±20V 2410pF @ 20V 31.1nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 78W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.6m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 80A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 31.1nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 80A |
| Drain-source On Resistance-Max | 0.0056Ohm |
| Pulsed Drain Current-Max (IDM) | 160A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 35 mJ |
| RoHS Status | ROHS3 Compliant |
