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ContactRFD3055LESM9A
RFD3055LESM9A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-RFD3055LESM9A
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4673
- Description: RFD3055LESM9A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 11A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 38W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 38W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 107m Ω @ 8A, 5V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
| Rise Time | 105ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 39 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 3 V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 107mOhm |
RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.
RFD3055LESM9A Features
11A, 60V
rDS(ON)= 0.107Ω
Temperature Compensating PSPICE? Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
RFD3055LESM9A Applications
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
Switching regulators
Switching converters
