RD3L140SPTL1

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 84m Ω @ 14A, 10V ±20V 1900pF @ 10V 27nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63


  • Manufacturer: ROHM Semiconductor
  • NO: 687-RD3L140SPTL1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 1172
  • Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 84m Ω @ 14A, 10V ±20V 1900pF @ 10V 27nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 20W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 84m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.108Ohm
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant

In Stock

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