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ContactR8002ANX
MOSFET (Metal Oxide) N-Channel Bulk 4.3 Ω @ 1A, 10V ±30V 210pF @ 25V 12.7nC @ 10V TO-220-3 Full Pack
- Manufacturer: ROHM Semiconductor
- NO: 687-R8002ANX
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 9037
- Description: MOSFET (Metal Oxide) N-Channel Bulk 4.3 Ω @ 1A, 10V ±30V 210pF @ 25V 12.7nC @ 10V TO-220-3 Full Pack (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Power Dissipation-Max | 35W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 35W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.3 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12.7nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 2A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain to Source Breakdown Voltage | 800V |
| Pulsed Drain Current-Max (IDM) | 8A |
| Avalanche Energy Rating (Eas) | 0.265 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
