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MOSFET (Metal Oxide) N-Channel Digi-Reel® 8.5m Ω @ 15A, 10V ±20V 3640pF @ 40V 55nC @ 10V SC-100, SOT-669
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN8R2-80YS,115
- Package: SC-100, SOT-669
- Datasheet:
- Stock: 4396
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 8.5m Ω @ 15A, 10V ±20V 3640pF @ 40V 55nC @ 10V SC-100, SOT-669 (Kg)
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| Parameters | |
|---|---|
| Turn-Off Delay Time | 51 ns |
| Continuous Drain Current (ID) | 82A |
| JEDEC-95 Code | MO-235 |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 80V |
| Drain-source On Resistance-Max | 0.0085Ohm |
| Drain to Source Breakdown Voltage | 80V |
| Pulsed Drain Current-Max (IDM) | 326A |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Digi-Reel® |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 130W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 130W |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3640pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 82A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
PSMN8R2-80YS,115 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3640pF @ 40V is its maximum input capacitance.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 82A.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Pulsed drain current is maximum rated peak drain current 326A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 80V.Its overall power consumption can be reduced by using drive voltage (10V).
PSMN8R2-80YS,115 Features
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 326A.
PSMN8R2-80YS,115 Applications
There are a lot of Nexperia USA Inc. PSMN8R2-80YS,115 applications of single MOSFETs transistors.
- Industrial Power Supplies
- Power Tools
- LCD/LED TV
- LCD/LED/ PDP TV Lighting
- Solar Inverter
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Power Management Functions
- General Purpose Interfacing Switch
- DC/DC converters
