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ContactPSMN5R6-100PS,127
PSMN5R6-100PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN5R6-100PS,127
- Package: TO-220-3
- Datasheet:
- Stock: 7488
- Description: PSMN5R6-100PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 306W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 306W |
| Case Connection | DRAIN |
| Turn On Delay Time | 31 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8061pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 141nC @ 10V |
| Rise Time | 46ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 34 ns |
| Turn-Off Delay Time | 83 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.0056Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Avalanche Energy Rating (Eas) | 468 mJ |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
PSMN5R6-100PS,127 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 468 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8061pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 83 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 31 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
PSMN5R6-100PS,127 Features
the avalanche energy rating (Eas) is 468 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 83 ns
PSMN5R6-100PS,127 Applications
There are a lot of Nexperia USA Inc. PSMN5R6-100PS,127 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Uninterruptible Power Supply
- Lighting
- Micro Solar Inverter
- Motor drives and Uninterruptible Power Supplies
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Power Management Functions
- Consumer Appliances
- Industrial Power Supplies
