PSMN4R0-30YL,115

PSMN4R0-30YL,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-PSMN4R0-30YL,115
  • Package: SC-100, SOT-669
  • Datasheet: pdf
  • Stock: 6735
  • Description: PSMN4R0-30YL,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2090pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 36.6nC @ 10V
Rise Time 51ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 99A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 396A
Avalanche Energy Rating (Eas) 41 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN4R0-30YL,115 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 41 mJ.The maximum input capacitance of this device is 2090pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Its drain current is 99A, and it is the maximum continuous current the device can conduct.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.Peak drain current is 396A, which is the maximum pulsed drain current.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

PSMN4R0-30YL,115 Features


the avalanche energy rating (Eas) is 41 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 396A.

PSMN4R0-30YL,115 Applications


There are a lot of Nexperia USA Inc. PSMN4R0-30YL,115 applications of single MOSFETs transistors.

  • General Purpose Interfacing Switch
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • DC/DC converters
  • Telecom 1 Sever Power Supplies
  • AC-DC Power Supply
  • Solar Inverter
  • Lighting, Server, Telecom and UPS.
  • Power Tools
  • Micro Solar Inverter
  • Load switching

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