PSMN3R4-30PL,127

PSMN3R4-30PL,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-PSMN3R4-30PL,127
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 4256
  • Description: PSMN3R4-30PL,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 4.1MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 114W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 114W
Case Connection DRAIN
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3907pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 73ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 609A
Avalanche Energy Rating (Eas) 200 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN3R4-30PL,127 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3907pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.Its turn-off delay time is 59 ns, which is the time to charge the device's input capacitance before drain current conduction begins.There is a peak drain current of 609A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 40 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Powered by 30V, it supports maximum dual supply voltages.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

PSMN3R4-30PL,127 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 59 ns
based on its rated peak drain current 609A.

PSMN3R4-30PL,127 Applications


There are a lot of Nexperia USA Inc. PSMN3R4-30PL,127 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • PFC stages, hard switching PWM stages and resonant switching
  • Power Tools
  • Lighting
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor Drives and Uninterruptible Power Supples
  • Motor control
  • LCD/LED TV
  • Telecom 1 Sever Power Supplies
  • Micro Solar Inverter

In Stock

Please send RFQ , we will respond immediately.