Products
Manufacturer
RFQ
NEWS
ContactPSMN2R2-25YLC,115
PSMN2R2-25YLC,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN2R2-25YLC,115
- Package: SC-100, SOT-669
- Datasheet:
- Stock: 4560
- Description: PSMN2R2-25YLC,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Resistance | 3.15MOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 106W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 106W |
| Case Connection | DRAIN |
| Turn On Delay Time | 24 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2542pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Rise Time | 34ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | MO-235 |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 25V |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 636A |
| Avalanche Energy Rating (Eas) | 60 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PSMN2R2-25YLC,115 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2542pF @ 12V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=25V.?And this device has 25V drain to source breakdown voltage.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Pulsed drain current is maximum rated peak drain current 636A.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 24 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 25V, it supports the maximal dual supply voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
PSMN2R2-25YLC,115 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 636A.
PSMN2R2-25YLC,115 Applications
There are a lot of Nexperia USA Inc. PSMN2R2-25YLC,115 applications of single MOSFETs transistors.
- Lighting
- Power Tools
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- LCD/LED/ PDP TV Lighting
- Synchronous Rectification
- Load switching
- Server power supplies
- General Purpose Interfacing Switch
- Uninterruptible Power Supply
- Lighting, Server, Telecom and UPS.
