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PSMN2R0-30PL,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN2R0-30PL,127
- Package: TO-220-3
- Datasheet:
- Stock: 8848
- Description: PSMN2R0-30PL,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Dual Supply Voltage | 30V |
| Drain-source On Resistance-Max | 0.0028Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Avalanche Energy Rating (Eas) | 555 mJ |
| Height | 6.35mm |
| Length | 31.75mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 211W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 211W |
| Case Connection | DRAIN |
| Turn On Delay Time | 63 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.1m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6810pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Rise Time | 125ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 59 ns |
| Turn-Off Delay Time | 111 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
PSMN2R0-30PL,127 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 555 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6810pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 111 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 63 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
PSMN2R0-30PL,127 Features
the avalanche energy rating (Eas) is 555 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 111 ns
PSMN2R0-30PL,127 Applications
There are a lot of Nexperia USA Inc. PSMN2R0-30PL,127 applications of single MOSFETs transistors.
- Server power supplies
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- PFC stages, hard switching PWM stages and resonant switching
- Battery Protection Circuit
- Load switching
- Solar Inverter
- Consumer Appliances
- Telecom 1 Sever Power Supplies
- Motor control
- Synchronous Rectification
