PSMN1R2-25YL,115

MOSFET (Metal Oxide) N-Channel Digi-Reel® 1.2m Ω @ 15A, 10V ±20V 6380pF @ 12V 105nC @ 10V SOT-1023, 4-LFPAK


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-PSMN1R2-25YL,115
  • Package: SOT-1023, 4-LFPAK
  • Datasheet: pdf
  • Stock: 8479
  • Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 1.2m Ω @ 15A, 10V ±20V 6380pF @ 12V 105nC @ 10V SOT-1023, 4-LFPAK (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-1023, 4-LFPAK
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.2MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 121W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 121W
Case Connection DRAIN
Turn On Delay Time 69 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6380pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Rise Time 125ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 815A
Avalanche Energy Rating (Eas) 677 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN1R2-25YL,115 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 677 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6380pF @ 12V.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 815A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 69 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.By using 25V, it can supply the maximum voltage from two sources.In this case, the threshold voltage of the transistor is 1.7V, which means that it will not activate any of its functions when its threshold voltage reaches 1.7V.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

PSMN1R2-25YL,115 Features


the avalanche energy rating (Eas) is 677 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 815A.
a threshold voltage of 1.7V

PSMN1R2-25YL,115 Applications


There are a lot of Nexperia USA Inc. PSMN1R2-25YL,115 applications of single MOSFETs transistors.

  • Motor control
  • Industrial Power Supplies
  • Motor drives and Uninterruptible Power Supplies
  • Motor Drives and Uninterruptible Power Supples
  • Micro Solar Inverter
  • Battery Protection Circuit
  • General Purpose Interfacing Switch
  • Solar Inverter
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Telecom 1 Sever Power Supplies

In Stock

Please send RFQ , we will respond immediately.