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PSMN1R0-30YLDX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN1R0-30YLDX
- Package: SC-100, SOT-669
- Datasheet:
- Stock: 428
- Description: PSMN1R0-30YLDX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 238W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 32.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.02m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8598pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 121.35nC @ 10V |
| Rise Time | 44.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 31.7 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | MO-235 |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 30V |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PSMN1R0-30YLDX Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8598pF @ 15V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 32.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.As it is powered by 30V, it can support the maximum dual supply voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
PSMN1R0-30YLDX Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 43 ns
PSMN1R0-30YLDX Applications
There are a lot of Nexperia USA Inc. PSMN1R0-30YLDX applications of single MOSFETs transistors.
- Synchronous Rectification
- Server power supplies
- Solar Inverter
- Uninterruptible Power Supply
- PFC stages, hard switching PWM stages and resonant switching
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Power Management Functions
- Consumer Appliances
- Motor control
- Telecom 1 Sever Power Supplies
