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ContactPSMN057-200B,118
PSMN057-200B,118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN057-200B,118
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 1787
- Description: PSMN057-200B,118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 250W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 57m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3750pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Rise Time | 58ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 78 ns |
| Turn-Off Delay Time | 105 ns |
| Continuous Drain Current (ID) | 39A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 200V |
| Drain-source On Resistance-Max | 0.057Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 156A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PSMN057-200B,118 Overview
The maximum input capacitance of this device is 3750pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.It is [105 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Pulsed drain current is maximum rated peak drain current 156A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
PSMN057-200B,118 Features
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 105 ns
based on its rated peak drain current 156A.
PSMN057-200B,118 Applications
There are a lot of Nexperia USA Inc. PSMN057-200B,118 applications of single MOSFETs transistors.
- Motor Drives and Uninterruptible Power Supples
- Motor control
- Consumer Appliances
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Solar Inverter
- AC-DC Power Supply
- Motor drives and Uninterruptible Power Supplies
- Power Tools
- Telecom 1 Sever Power Supplies
- Micro Solar Inverter
