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ContactPSMN025-100D,118
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25m Ω @ 25A, 10V ±20V 2600pF @ 25V 61nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN025-100D,118
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2206
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25m Ω @ 25A, 10V ±20V 2600pF @ 25V 61nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 47A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 47A |
| Drain-source On Resistance-Max | 0.025Ohm |
| Pulsed Drain Current-Max (IDM) | 188A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 260 mJ |
| RoHS Status | ROHS3 Compliant |
PSMN025-100D,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 260 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and this device has 47A continuous drain current (ID).A maximum pulsed drain current of 188A is the maximum peak drain current rated for this device.The DS breakdown voltage should be maintained above 100V to maintain normal operation.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V) reduces this device's overall power consumption.
PSMN025-100D,118 Features
the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 47A
based on its rated peak drain current 188A.
a 100V drain to source voltage (Vdss)
PSMN025-100D,118 Applications
There are a lot of Nexperia USA Inc. PSMN025-100D,118 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- LCD/LED TV
- Micro Solar Inverter
- Server power supplies
- Motor control
- LCD/LED/ PDP TV Lighting
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Motor Drives and Uninterruptible Power Supples
- DC/DC converters
- Consumer Appliances
