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ContactPHU108NQ03LT,127
MOSFET (Metal Oxide) N-Channel Tube 6m Ω @ 25A, 10V ±20V 1375pF @ 12V 16.3nC @ 4.5V 25V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: NXP USA Inc.
- NO: 318-PHU108NQ03LT,127
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 13159
- Description: MOSFET (Metal Oxide) N-Channel Tube 6m Ω @ 25A, 10V ±20V 1375pF @ 12V 16.3nC @ 4.5V 25V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | TrenchMOS™ |
| Published | 2005 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 187W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1375pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16.3nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain-source On Resistance-Max | 0.0075Ohm |
| Pulsed Drain Current-Max (IDM) | 240A |
| DS Breakdown Voltage-Min | 25V |
| Avalanche Energy Rating (Eas) | 180 mJ |
| RoHS Status | ROHS3 Compliant |
