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ContactPHK4NQ20T,518
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 4A, 10V ±20V 1230pF @ 25V 26nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width)
- Manufacturer: NXP USA Inc.
- NO: 318-PHK4NQ20T,518
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4520
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 4A, 10V ±20V 1230pF @ 25V 26nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width) (Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 6.25W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1230pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| JEDEC-95 Code | MS-012 |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.13Ohm |
| DS Breakdown Voltage-Min | 200V |
| RoHS Status | ROHS3 Compliant |
