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NX7002BKMB - 60 V, N-channel Trench MOSFET
- Manufacturer: Nexperia USA Inc.
- NO: 554-NX7002BKMBYL
- Package: 3-XFDFN
- Datasheet:
- Stock: 8057
- Description: NX7002BKMB - 60 V, N-channel Trench MOSFET (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchMOS™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| RoHS Status | ROHS3 Compliant |
| Number of Pins | 3 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | DRAIN |
| Power Dissipation-Max | 350mW Ta 3.1W Tc |
| Continuous Drain Current (ID) | 350mA |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 60V |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.8 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 23.6pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA Ta |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
