NVTFS5811NLWFTAG

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.7m Ω @ 20A, 10V ±20V 1570pF @ 25V 30nC @ 10V 8-PowerWDFN


  • Manufacturer: ON Semiconductor
  • NO: 598-NVTFS5811NLWFTAG
  • Package: 8-PowerWDFN
  • Datasheet: pdf
  • Stock: 3730
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.7m Ω @ 20A, 10V ±20V 1570pF @ 25V 30nC @ 10V 8-PowerWDFN (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 8
Configuration Single
Number of Channels 1
Power Dissipation-Max 3.2W Ta 21W Tc
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.