NVGS3443T1G

NVGS3443T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NVGS3443T1G
  • Package: SOT-23-6
  • Datasheet: pdf
  • Stock: 791
  • Description: NVGS3443T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Max Power Dissipation 1W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 6
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 5V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 18ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.2A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVGS3443T1G Description


The NVGS3443T1G power MOSFET from ON Semiconductor is ideal if you need to amplify or switch between signals in your design. It can dissipate up to 2000 mW of power. To allow for easy mounting and secure delivery, this device will be sent in tape and reel packing. This enhancement mode MOSFET transistor has a P channel. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.



NVGS3443T1G Features


  • Ultra-Low RDS(on)

  • Higher Efficiency Extending Battery Life

  • Miniature TSOP?6 Surface Mount Package

  • These Devices are Pb?Free and are RoHS Compliant

  • NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable



NVGS3443T1G Applications


  • Cellular

  • Cordless Telephones

  • PCMCIA Cards


In Stock

Please send RFQ , we will respond immediately.