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NVATS5A112PLZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVATS5A112PLZT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6034
- Description: NVATS5A112PLZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 48W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 27A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 33.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 27A |
| Drain-source On Resistance-Max | 0.043Ohm |
| Pulsed Drain Current-Max (IDM) | 81A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 50 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NVATS5A112PLZT4G Description
NVATS5A112PLZT4G is a -60v P-Channel Power MOSFET. The Automotive Power MOSFET NVATS5A112PLZT4G is designed for compact and efficient designs and includes high thermal performance. ATPAK devices are Low on-resistance, have High current capability, and are pin-compatible with DPAK(TO-252). The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NVATS5A112PLZT4G is in the ATPAK-3 package with 48W power dissipation.
NVATS5A112PLZT4G Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 Qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free, and RoHS compliance
NVATS5A112PLZT4G Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
Head Light
Body Control
