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NTTFS4824NTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTTFS4824NTAG
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 5711
- Description: NTTFS4824NTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 660mW Ta 46.3W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 4.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2363pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 8.3A Ta 69A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 11.5V |
| Rise Time | 38ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.5 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 20.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 69A |
| Drain-source On Resistance-Max | 0.0075Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 1.9 V |
| Feedback Cap-Max (Crss) | 255 pF |
| Height | 750μm |
| Length | 3.15mm |
| Width | 3.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTTFS4824NTAG MOSFET Description
As an N-Channel power MOSFET, the NTTFS4824NTAG has high efficiency out of compact package design. Also, it benefits from its on-resistance to minimize conduction losses. Furthermore, low capacitance is also helpful to reduce driver losses to a large extent.
NTTFS4824NTAG MOSFET Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
High Efficiency
NTTFS4824NTAG MOSFT Applications
DC-DC Converters
Low Side Switching
Notebook Computers
Inductors
Bridge Configurations
Synchronous Rectifiers
