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NTMFS4835NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTMFS4835NT1G
- Package: 8-PowerTDFN, 5 Leads
- Datasheet:
- Stock: 971
- Description: NTMFS4835NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Surface Mount | YES |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 890mW Ta 62.5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta 130A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 11.5V |
| Rise Time | 31ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 208A |
| Avalanche Energy Rating (Eas) | 392 mJ |
| Height | 1.1mm |
| Length | 5.1mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTMFS4835NT1G Description
NTMFS4835NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. Based on its low RDS(on), it is able to minimize conduction losses, and it is capable of minimizing driver losses on the basis of its low capacitance. Due to its superior quality and reliable performance, it is well suited for a wide range of applications, including DC-DC converters, CPU power delivery, and more.
NTMFS4835NT1G Features
Low RDS(on)
Low capacitance
Optimized gate charge
Low switching losses
Available in the SO-8 package
NTMFS4835NT1G Applications
DC-DC converters
CPU power delivery
Low side switching
