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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 700mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2240pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 88 ns |
| Turn-Off Delay Time | 150 ns |
| Continuous Drain Current (ID) | 5.1A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 8.2A |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Produced by On Semiconductor, the NTLUS3A18PZTCG. IGBT Transistors make up its category. It is used in a variety of industries, including projectors, enterprise systems, industrial lighting, and communications equipment. Additionally, this component's primary specifications are as follows: Single P-Channel Power MOSFET with ESD Protection -20V -8.2A 18m. It is also environmentally friendly and RoHS compliant (lead-free).
Ultra Low RDS(on)
ESD Diode-Protected Gate
Low Profile UDFN 2.0×2,0×0.55mm for Board Space Saving
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction
Battery Switch
High Side Load Switch
Optimized for Power Management Applications for Portable products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others
Please send RFQ , we will respond immediately.