NTLUS3A18PZTCG

NTLUS3A18PZTCG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTLUS3A18PZTCG
  • Package: 6-UDFN Exposed Pad
  • Datasheet: pdf
  • Stock: 2417
  • Description: NTLUS3A18PZTCG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 88 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 8.2A
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTLUS3A18PZTCG Description


Produced by On Semiconductor, the NTLUS3A18PZTCG. IGBT Transistors make up its category. It is used in a variety of industries, including projectors, enterprise systems, industrial lighting, and communications equipment. Additionally, this component's primary specifications are as follows: Single P-Channel Power MOSFET with ESD Protection -20V -8.2A 18m. It is also environmentally friendly and RoHS compliant (lead-free).



NTLUS3A18PZTCG Features


  • Ultra Low RDS(on)

  • ESD Diode-Protected Gate

  • Low Profile UDFN 2.0×2,0×0.55mm for Board Space Saving

  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

  • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction



NTLUS3A18PZTCG Applications


  • Battery Switch

  • High Side Load Switch

  • Optimized for Power Management Applications for Portable products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others


In Stock

Please send RFQ , we will respond immediately.