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ContactNTK3043NT1G
NTK3043NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTK3043NT1G
- Package: SOT-723
- Datasheet:
- Stock: 2244
- Description: NTK3043NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 3.4Ohm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 225mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 310mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 440mW |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.4 Ω @ 10mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 210mA Ta |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.65V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 94 ns |
| Continuous Drain Current (ID) | 285mA |
| Threshold Voltage | 400mV |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 0.255A |
| Drain to Source Breakdown Voltage | 20V |
| Height | 550μm |
| Length | 1.25mm |
| Width | 850μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTK3043NT1G Description
These N-Channel enhancement mode power field effect transistors are made using Fairchild's proprietary planar stripe DMOS technology. This unique technology has been specially optimized to minimize on-state resistance, increase switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are suited for high-efficiency switching DC/DC converters and switch mode power supply.
NTK3043NT1G Features
? Allows for the production of high-density PCBs
? Footprint is 44 percent smaller and 38 percent thinner than SC89.
? This device's low voltage drive makes it ideal for portable equipment.
? VGS(TH) 1.3 V, Low Threshold Levels
? Its modest profile (0.5 mm) enables it to easily fit into ultra-thin environments like portable electronics.
? Logic Level Gate Drive was used, allowing for future migration to lower levels using the same basic topology.
? These devices are free of lead and halogens.
NTK3043NT1G Applications
? Switching, Interfacing
? Switching at a High Rate
? Cellphones and PDAs
