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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.1W |
| Turn On Delay Time | 5.8 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 3.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A Tj |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
| Rise Time | 11.7ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 12.4 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 4.4A |
| Threshold Voltage | -1.5V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| FET Feature | Schottky Diode (Isolated) |
| Nominal Vgs | -450 mV |
| Height | 1.05mm |
| Length | 3.05mm |
| Width | 1.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Surface Mount | YES |
| Number of Pins | 8 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 64MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3.2A |
NTHD3101FT1G is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of NTHD3101FT1G is -55°C~150°C TJ and its maximum power dissipation is 1.1W. NTHD3101FT1G has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of NTHD3101FT1G is 5.8 ns and its Turn-Off Delay Time is 16 ns.
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP?6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Independent Pinout to each Device to Ease Circuit Design
Trench P?Channel for Low On-Resistance
Ultra Low VF Schottky
Pb?Free Packages are Available
Li?Ion Battery Charging
High Side DC?DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
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