NTHD3101FT1G

NTHD3101FT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTHD3101FT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 3311
  • Description: NTHD3101FT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 5.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Tj
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Rise Time 11.7ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 12.4 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Nominal Vgs -450 mV
Height 1.05mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 64MOhm
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -3.2A

NTHD3101FT1G Description


NTHD3101FT1G is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of NTHD3101FT1G is -55°C~150°C TJ and its maximum power dissipation is 1.1W. NTHD3101FT1G has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of NTHD3101FT1G is 5.8 ns and its Turn-Off Delay Time is 16 ns.



NTHD3101FT1G Features


  • Leadless SMD Package Featuring a MOSFET and Schottky Diode

  • 40% Smaller than TSOP?6 Package

  • Leadless SMD Package Provides Great Thermal Characteristics

  • Independent Pinout to each Device to Ease Circuit Design

  • Trench P?Channel for Low On-Resistance

  • Ultra Low VF Schottky

  • Pb?Free Packages are Available



NTHD3101FT1G Applications


  • Li?Ion Battery Charging

  • High Side DC?DC Conversion Circuits

  • High Side Drive for Small Brushless DC Motors

  • Power Management in Portable, Battery Powered Products


In Stock

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