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ContactNTGS3441T1G
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 90m Ω @ 3.3A, 4.5V ±8V 480pF @ 5V 14nC @ 4.5V 20V SOT-23-6
- Manufacturer: ON Semiconductor
- NO: 598-NTGS3441T1G
- Package: SOT-23-6
- Datasheet:
- Stock: 4749
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 90m Ω @ 3.3A, 4.5V ±8V 480pF @ 5V 14nC @ 4.5V 20V SOT-23-6 (Kg)
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| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 1.65A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Rise Time | 23.5ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 24 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 2.35A |
| Threshold Voltage | -1.05V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | -20V |
| Nominal Vgs | -1.05 V |
| Height | 1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 90MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
NTGS3441T1G Description
NTGS3441T1G P-channel MOSFET is based on an original, unique vertical structure. NTGS3441T1G MOSFET results in a dramatic reduction in the on-resistance. NTGS3441T1G ON Semiconductor is utilized in the switching power applications such as Cellular and Cordless Telephones, Power Management in Portable Products, Power Management in Battery-Powered Products, PCMCIA Cards.
NTGS3441T1G Features
RoHS Compliant
Higher Efficiency Extending Battery Life
Ultra Low RDS(on)
NTGS3441T1G Applications
Cellular and Cordless Telephones
Power Management in Portable Products
Power Management in Battery-Powered Products
PCMCIA Cards
