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NTGS3136PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTGS3136PT1G
- Package: SOT-23-6
- Datasheet:
- Stock: 7010
- Description: NTGS3136PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 700mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1901pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Rise Time | 9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 99 ns |
| Continuous Drain Current (ID) | -5.1A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 3.7A |
| Drain-source On Resistance-Max | 0.033Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Height | 1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTGS3136PT1G Description
NTGS3136PT1G belongs to the family of P-channel MOSFETs manufactured by ON Semiconductor. MOSFET NTGS3136PT1G is able to minimize on-state resistance and provide excellent switching performance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including battery and load management applications in portable equipment, high side load switches, switching circuits for game consoles, camera phones, etc.
NTGS3136PT1G Features
Low RDS (on)
Low gate charge
Advanced switching performance
Available in the TSOP-6 package
NTGS3136PT1G Applications
Battery and load management applications in portable equipment
High side load switch
Switching circuits for game consoles, camera phones, etc.
