NTDV18N06LT4G

NTDV18N06LT4G Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 72 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 675pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Peak drain current is 54A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.

NTDV18N06LT4G Features

the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 19 ns
based on its rated peak drain current 54A.
a 60V drain to source voltage (Vdss)

NTDV18N06LT4G Applications

There are a lot of ON Semiconductor
NTDV18N06LT4G applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies