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ContactNTD95N02R-1G
MOSFET (Metal Oxide) N-Channel Tube 5m Ω @ 20A, 10V ±20V 2400pF @ 20V 21nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: ON Semiconductor
- NO: 598-NTD95N02R-1G
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 2686
- Description: MOSFET (Metal Oxide) N-Channel Tube 5m Ω @ 20A, 10V ±20V 2400pF @ 20V 21nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 24V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 95A |
| Power Dissipation-Max | 1.25W Ta 86W Tc |
| Element Configuration | Single |
| Power Dissipation | 86W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta 32A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| Rise Time | 82ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 32A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 24V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
