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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 74MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 71W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 71W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 74m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 19A |
| Threshold Voltage | 2.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 70A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Nominal Vgs | 2.2 V |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
NTD6416ANLT4G is a 100v Single N-Channel Logic Level Power MOSFET. The onsemi NTD6416ANLT4G is designed for motor control and UPS Inverter applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NTD6416ANLT4G is in the TO-252-3 package with 71W power dissipation.
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free and are RoHS Compliant
UPS Inverter
AC Motor Applications
DC Motor Applications
Brushless DC Motor Applications
Stepper Motor Applications
Please send RFQ , we will respond immediately.