NTD6416ANLT4G

NTD6416ANLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTD6416ANLT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 518
  • Description: NTD6416ANLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 74MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G2
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 74m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 50 mJ
Nominal Vgs 2.2 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009

NTD6416ANLT4G Description


NTD6416ANLT4G is a 100v Single N-Channel Logic Level Power MOSFET. The onsemi NTD6416ANLT4G is designed for motor control and UPS Inverter applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NTD6416ANLT4G is in the TO-252-3 package with 71W power dissipation.



NTD6416ANLT4G Features


  • Low RDS(on)

  • High Current Capability

  • 100% Avalanche Tested

  • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • Pb?Free and are RoHS Compliant



NTD6416ANLT4G Applications


  • UPS Inverter

  • AC Motor Applications

  • DC Motor Applications

  • Brushless DC Motor Applications

  • Stepper Motor Applications


In Stock

Please send RFQ , we will respond immediately.