NTD4960N-1G

MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 30A, 10V ±20V 1300pF @ 15V 22nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA


  • Manufacturer: ON Semiconductor
  • NO: 598-NTD4960N-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: pdf
  • Stock: 14387
  • Description: MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 30A, 10V ±20V 1300pF @ 15V 22nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.07W Ta 35.71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.68W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 11.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.9A
Drain to Source Breakdown Voltage 30V
Height 7.49mm
Length 6.73mm
Width 2.38mm
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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