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ContactNTD25P03LT4G
NTD25P03LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTD25P03LT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4183
- Description: NTD25P03LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 51MOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -25A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 75W Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 75W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1260pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 25A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Rise Time | 37ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 25A |
| Threshold Voltage | -1.6V |
| Gate to Source Voltage (Vgs) | 15V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 75A |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Nominal Vgs | -1.6 V |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
NTD25P03LT4G Description
The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high-speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD25P03LT4G is in the TO-252-4 package with 75W power dissipation.
NTD25P03LT4G Features
AEC?Q101 Qualified and PPAP Capable
Pb?Free and RoHS Compliant
Drain?to?Source Voltage: -30v
Total Power Dissipation @ TA= 25°C: 75w
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
NTD25P03LT4G Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
Motor Drive & Control
Power Management
