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| Parameters | |
|---|---|
| Drain-source On Resistance-Max | 0.08Ohm |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 75A |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Nominal Vgs | -1.6 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -25A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 75W Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 75W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1260pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 25A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Rise Time | 37ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 25A |
| Gate to Source Voltage (Vgs) | 15V |
NTD25P03LG is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 30V. NTD25P03LG is designed to handle high energy in the avalanche and commutation modes and be used in low voltage, high speed switching applications. The recovery period of the source-to-drain diode is comparable to that of a discrete fast recovery diode.
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
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