NTD24N06LT4G

NTD24N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTD24N06LT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 1661
  • Description: NTD24N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 36mOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 24A
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.36W Ta 62.5W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 97ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 72A
Nominal Vgs 1.7 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTD24N06LT4G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1140pF @ 25V is its maximum input capacitance.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Peak drain current for this device is 72A, which is its maximum pulsed drain current.A turn-on delay time of 9.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.A device like this reduces its overall power consumption when it uses drive voltage (5V).

NTD24N06LT4G Features


a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 72A.

NTD24N06LT4G Applications


There are a lot of ON Semiconductor NTD24N06LT4G applications of single MOSFETs transistors.

  • Motor Drives and Uninterruptible Power Supples
  • Industrial Power Supplies
  • Lighting, Server, Telecom and UPS.
  • Motor drives and Uninterruptible Power Supplies
  • LCD/LED TV
  • Synchronous Rectification
  • DC-to-DC converters
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Battery Protection Circuit
  • Lighting

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