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MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 150m Ω @ 7.5A, 5V ±20V 1190pF @ 25V 26nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: ON Semiconductor
- NO: 598-NTD20P06LT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 10068
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 150m Ω @ 7.5A, 5V ±20V 1190pF @ 25V 26nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 130mOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 65W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 65W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 7.5A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 15.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 5V |
| Rise Time | 90ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 28 ns |
| Continuous Drain Current (ID) | 15.5A |
| Threshold Voltage | -1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Nominal Vgs | -1.5 V |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTD20P06LT4G Description
NTD20P06LT4G is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 60V. The operating temperature of the NTD20P06LT4G is -55°C~175°C TJ and its maximum power dissipation is 65W Tc. NTD20P06LT4G has 3 pins and it is available in Cut Tape (CT) packaging way.
NTD20P06LT4G Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified ? NTDV20P06L
These Devices are Pb?Free and are RoHS Compliant
NTD20P06LT4G Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DC?DC Conversion
